Multifunctional Photodetectors Based on Nanolayered Black Phosphorus/SnS0.5Se1.5 Heterostructures

High-Sensitive Ultraviolet Photodetectors Based on ZnO Nanorods/CdS Heterostructures

The ultraviolet (UV) photodetectors with ZnO nanorods (NRs)/CdS thin film heterostructures on glass substrates have been fabricated and characterized. It can be seen that the UV photoresponsivity of such a device became higher as the ZnO NR length was increased in the investigation. With an incident wavelength of 350 nm and 5 V applied bias, the responsivity of photodetectors based on ZnO NR/Cd...

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene is transferable onto MoS2. We demonst...

Multipurpose Black-Phosphorus/hBN Heterostructures.

Black phosphorus (BP) has recently emerged as a promising semiconducting two-dimensional material. However, its viability is threatened by its instability in ambient conditions and by the significant decrease of its band gap in multilayers. We show that one could solve all the aforementioned problems by interfacing BP with hexagonal boron nitride (hBN). To this end, we simulate large, rotated h...

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost...

HgCdTe Heterostructures Grown by MBE on Si(310) for Infrared Photodetectors